参数资料
型号: SI1563EDH-T1-GE3
厂商: Vishay Siliconix
文件页数: 1/14页
文件大小: 0K
描述: MOSFET N/P-CH 20V SC70-6
标准包装: 3,000
系列: TrenchFET®
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.13A,880mA
开态Rds(最大)@ Id, Vgs @ 25° C: 280 毫欧 @ 1.13A,4.5V
Id 时的 Vgs(th)(最大): 450mV @ 100µA
闸电荷(Qg) @ Vgs: 1nC @ 4.5V
功率 - 最大: 570mW
安装类型: *
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
Si1563EDH
Vishay Siliconix
Complementary 20 V (D-S) Low-Threshold MOSFET
FEATURES
PRODUCT SUMMARY
?
TrenchFET ? Power MOSFETS: 1.8 V Rated
V DS (V)
R DS(on) ( ? )
0.280 at V GS = 4.5 V
I D (A)
1.28
?
?
ESD Protected: 2000 V
Thermally Enhanced SC-70 Package
N-Channel
20
0.360 at V GS = 2.5 V
0.450 at V GS = 1.8 V
0.490 at V GS = - 4.5 V
1.13
1
-1
?
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
P-Channel
- 20
0.750 at V GS = - 2.5 V
1.10 at V GS = - 1.8 V
- 0.81
- 0.67
APPLICATIONS
? Load Switching
? PA Switch
? Level Switch
SOT-363
SC-70 (6-LEADS)
D 1
S 2
S 1
1
6
D 1
Marking Code
1k
EA
XX
G 1
G 1
2
5
G 2
Lot Tracea b ility
and Date Code
G 2
D 2
3
4
S 2
Part # Code
3k
N -Channel
P-Channel
Top V ie w
Ordering Information: Si1563EDH-T1-E3 (Lead (P b )-free)
Si1563EDH-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N-Channel
S 1
P-Channel
D 2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
20
± 12
5s
Steady State
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
1.28
0.92
4
1.13
0.81
-1
- 0.72
-3
- 0.88
- 0.63
A
Continuous Source Current (Diode Conduction) a
I S
0.61
0.48
- 0.61
- 0.48
Maximum Power Dissipation a
T A = 25 °C
T A = 85 °C
P D
0.74
0.38
0.57
0.30
0.30
0.16
0.57
0.3
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ? 5s
Steady State
Steady State
R thJA
R thJF
130
170
80
170
220
100
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71416
S12-1258-Rev. E, 21-May-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
SI1900DL-T1-E3 MOSFET N-CH DUAL 30V SC70-6
SI1902DL-T1-GE3 MOSFET N-CH G-S 20V DUAL SC-70-6
SI1926DL-T1-E3 MOSF N CH DUAL D-S 60V SC-70-6
SI1967DH-T1-E3 MOSFET 2P-CH 20V 1.3A SC70-6
SI1970DH-T1-GE3 MOSFET N-CH DUAL 30V SC70-6
相关代理商/技术参数
参数描述
SI15-K30-AN6 制造商:TURCK Inc 功能描述:Sensor, Inductive, 3 wire DC, NPN, 30mm Slot Sensor,Potted-in Cable
SI15-K30-AP6 制造商:TURCK Inc 功能描述:SI15-K30-AP6
SI15-K30-AP6X 制造商:TURCK Inc 功能描述:M1605001
SI15-K30-AZ3 制造商:TURCK Inc 功能描述:M1306900
SI15-K30-Y1 制造商:TURCK Inc 功能描述:SI15-K30-Y1