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参数资料
| 型号： | SI1563EDH-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SC70-6 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.13A，880mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 280 毫欧 @ 1.13A，4.5V |
| Id 时的 Vgs(th)（最大）： | 450mV @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1nC @ 4.5V |
| 功率 - 最大： | 570mW |
| 安装类型： | * |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Si1563EDH
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 100 μA
V DS = V GS , I D = - 100 μA
V DS = 0 V, V GS = ± 4.5 V
V DS = 0 V, V GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.45
- 0.45
1
-1
±1
±1
± 10
± 10
V
μA
mA
V DS = 16 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 16 V, V GS = 0 V
V DS = 16 V, V GS = 0 V, T J = 85 °C
P-Ch
N-Ch
-1
5
μA
V DS = - 16 V, V GS = 0 V, T J = 85 °C
P-Ch
-5
On-State Drain Current a
I D(on)
V DS ? 5 V, V GS = 4.5 V
V DS ?? - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 1.13 A
V GS = - 4.5 V, I D = - 0.88 A
N-Ch
P-Ch
N-Ch
P-Ch
2
-2
0.220
0.400
0.280
0.490
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V, I D = 0.99 A
V GS = - 2.5 V, I D = - 0.71 A
N-Ch
P-Ch
0.281
0.610
0.360
0.750
?
V GS = 1.8 V, I D = 0.20 A
V GS = - 1.8 V, I D = - 0.20 A
N-Ch
P-Ch
0.344
0.850
0.450
1.10
Forward Transconductance a
g fs
V DS = 10 V, I D = 1.13 A
V DS = - 10 V, I D = - 0.88 A
N-Ch
P-Ch
2.6
1.5
S
Diode Forward Voltage a
V SD
I S = 0.48 V, V GS = 0 V
I S = - 0.48 V, V GS = 0 V
N-Ch
P-Ch
0.8
- 0.8
1.2
- 1.2
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q g
Q gs
Q gd
t d(on)
N-Channel
V DS = 10 V, V GS = 4.5 V, I D = 1.13 A
P-Channel
V DS = - 10 V, V GS = - 4.5 V, I D = - 0.88 A
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.65
1.2
0.2
0.3
0.23
0.3
45
150
1
1.8
70
230
nC
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 10 V, R L = 20 ?
I D ? 0.5 A, V GEN = 4.5 V, R g = 6 ?
P-Channel
V DD = - 10 V, R L = 20 ?
I D ? - 0.5 A, V GEN = - 4.5 V, R g = 6 ?
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
85
480
350
840
210
850
130
720
530
1200
320
1200
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For more information please contact: pmostechsupport@vishay.com
Document Number: 71416
S12-1258-Rev. E, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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