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参数资料
| 型号： | SI2300DS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V SOT-23 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 320pF @ 15V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | SI2300DS-T1-GE3DKR |
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关PDF资料 |
PDF描述 |
|---|---|
| SI2302CDS-T1-GE3 | MOSFET N-CH 20V 2.6A SOT23-3 |
| SI2303BDS-T1-GE3 | MOSFET P-CH 30V 1.49A SOT23-3 |
| SI2304BDS-T1-GE3 | MOSFET N-CH 30V 2.6A SOT23-3 |
| SI2304DDS-T1-GE3 | MOSFET N-CH 30V 3.6A SOT23 |
| SI2305ADS-T1-E3 | MOSFET P-CH 8V 5.4A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2301 | 功能描述:MOSFET -20V -2.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2301_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| SI23015S99 | 制造商:ABB Control 功能描述:STARTER STAR DELTA 15W 230V |
| SI2301ADS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI2301ADS-T1 | 功能描述:MOSFET 20V 2.0A 0.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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