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| 型号： | SI2302CDS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.6A SOT23-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 57 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | SI2302CDS-T1-GE3DKR |
Si2302CDS
Vishay Siliconix
SPECIFICATIONS (T A = 25 °C, unless otherwise noted)
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 8 V
20
0.40
0.85
± 100
V
nA
V DS = 20 V, V GS = 0 V
0.1
Zero Gate Voltage Drain Current
I DSS
V DS = 20 V, V GS = 0 V, T J = 50 °C
4
μA
V DS = 20 V, V GS = 0 V, T J = 70 °C
15
On-State Drain Current a
I D(on)
V DS ?? 10 V, V GS = 4.5 V
6
A
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
R DS(on)
g fs
V SD
V GS = 4.5 V, I D = 3.6 A
V GS = 2.5 V, I D = 3.1 A
V DS = 5 V, I D = 3.6 A
I S = 0.95 A, V GS = 0 V
0.045
0.056
13
0.7
0.057
0.075
1.2
?
S
V
Dynamic
b
Total Gate Charge
Q g
3.5
5.5
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 10 V, V GS = 4.5 V, I D = 3.6 A
0.6
0.45
nC
Gate Resistance
R g
f = 1 MHz
2
4
8
?
Switching
Turn-On Delay Time
t d(on)
8
15
Rise Time
t r
V DD = 10 V, R L = 2.78 ?
7
15
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t d(off)
t f
t rr
Q rr
I D ? 3.6 A, V GEN = 4.5 V, R g = 1 ?
I F = 3.6 A, dI/dt = 100 A/μs
30
7
8.5
2
45
15
15
4
ns
nC
Notes:
a. Pulse test: Pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
V GS = 5 V thr u 2 V
10
8
6
4
V GS = 1.5 V
8
6
4
T C = 25 °C
2
V GS = 1 V
2
T C = 125 °C
T C = - 55 °C
0
0
0.0
0.5 1.0 1.5
2.0
0.0
0.4
0. 8
1.2
1.6
2.0
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
www.vishay.com
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For technical questions, contact: pmostechsupport@vishay.comm
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| SI2303BDS-T1-GE3 | MOSFET P-CH 30V 1.49A SOT23-3 |
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