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| 型号： | SI2303BDS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1.49A SOT23-3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.49A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 15V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
Si2303BDS
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 250 μA
- 30
- 1.0
- 3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = - 30 V, V GS = 0 V
V DS = - 30 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 10 V
-6
± 100
-1
- 10
nA
μA
A
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
R DS(on)
g fs
V SD
V GS = - 10 V, I D = - 1.7 A
V GS = - 4.5 V, I D = - 1.3 A
V DS = - 5 V, I D = - 1.7 A
I S = - 0.75 A, V GS = 0 V
0.150
0.285
2.0
- 0.85
0.200
0.380
- 1.2
Ω
S
V
Dynamic b
Total Gate Charge
Q g
4.3
10
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q gs
Q gd
C iss
C oss
C rss
V DS = - 15 V, V GS = - 10 V, I D ? - 1.7 A
V DS = - 15 V, V GS = 0 V, f = 1 MHz
0.8
1.3
180
50
35
nC
pF
Switching c
Turn-On Time
Turn-Off Time
t d(on)
t r
t d(off)
t f
V DD = - 15 V, R L = 15 Ω
I D ? - 1.0 A, V GEN = - 4.5 V
R G = 6 Ω
55
40
10
10
80
60
20
20
ns
Notes:
a. Pulse test: PW ≤ 300 μs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2303CDS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI2303CDS_13 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| Si2303CDS-T1-E3 | 功能描述:MOSFET 30V 2.7A 2.3W 190mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2303CDS-T1-GE3 | 功能描述:MOSFET 30V 2.7A 2.3W 190 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2303CDS-T1-GE3 | 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -30V 2.7A TO-236 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET, -30V, 2.7A TO-236 |
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