- 您现在的位置：买卖IC网 > Datasheet目录508 > SI2312BDS-T1-GE3 (Vishay Siliconix)MOSFET N-CH 20V 3.9A SOT23-3 Datasheet资料下载
参数资料
| 型号： | SI2312BDS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.9A SOT23-3 |
| 产品目录绘图： | SC75(A), SC89-3, SOT-23, SOT-323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | SI2312BDS-T1-GE3DKR |
Si2312BDS
Vishay Siliconix
SPECIFICATIONS T A = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
20
0.45
0.85
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 70 °C
V DS ≥ 10 V, V GS = 4.5 V
V GS = 4.5 V, I D = 5.0 A
15
0.025
± 100
1
75
0.031
nA
μA
A
Drain-Source On-Resistance a
R DS(on)
V GS = 2.5 V, I D = 4.6 A
0.030
0.037
Ω
V GS = 1.8 V, I D = 4.1 A
0.036
0.047
Forward Transconductance a
g fs
V DS = 15 V, I D = 5.0 A
30
S
Diode Forward Voltage
V SD
I S = 1.0 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
7.5
12
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 10 V, V GS = 4.5 V, I D = 5.0 A
1.4
1.2
nC
Gate Resistance
R g
f = 1.0 MHz
1.1
2.2
3.3
Ω
Switching
Turn-On Delay Time
t d(on)
9
15
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t r
t d(off)
t f
t rr
Q rr
V DD = 10 V, R L = 10 Ω
I D ? 1.0 A, V GEN = 4.5 V, R g = 6 Ω
I F = 1.0 A, dI/dt = 100 A/μs
30
35
10
13
4.5
45
55
15
25
7
ns
nC
Notes:
a. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
12
9
6
3
V GS = 4.5 V thru 2 V
1.5 V
15
12
9
6
3
T C = 125 °C
0
1V
0
25 °C
- 55 °C
0
1 2 3
4
0
0.25
0.5 0.75 1.0 1.25 1.5
1.75
2.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73235
S10-0791-Rev. D, 05-Apr-10
相关PDF资料 |
PDF描述 |
|---|---|
| SI2315BDS-T1-GE3 | MOSFET P-CH 12V 3A SOT23-3 |
| SI2335DS-T1-GE3 | MOSFET P-CH 12V 3.2A SOT23-3 |
| SI2367DS-T1-GE3 | MOSFET P-CH 20V 3.8A SOT-23 |
| SI2377EDS-T1-GE3 | MOSFET P-CH 20V SOT-23 |
| SI3424BDV-T1-GE3 | MOSFET N-CH 30V 8A 6TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2312CDS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
| SI2312CDS-T1-GE3 | 功能描述:MOSFET 20V 6A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI2312DS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 -V (D-S) MOSFET |
| SI2312DS_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 -V (D-S) MOSFET |
| SI2312DST1 | 制造商:VISHAY 功能描述:MOSFET TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。