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参数资料
| 型号： | SI2377EDS-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V SOT-23 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 61 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 8V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | SI2377EDS-T1-GE3DKR |
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All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI2392DS-T1-GE3 | 功能描述:MOSFET 100V 126mOhm@10V 3.1A N-Ch MV T-FET RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:100 V 闸/源击穿电压: 漏极连续电流:5 A 电阻汲极/源极 RDS（导通）:0.135 Ohms 配置:Single 最大工作温度:+150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| SI2399DS | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET |
| SI2399DS-T1-GE3 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CH 20V SOT-23 制造商:Vishay Siliconix 功能描述:MOSFET P CH W/D 20V 6A SOT23 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/D, 20V, 6A, SOT23 制造商:Vishay Intertechnologies 功能描述:MOSFET, P CH, W/D, 20V, 6A, SOT23, Transistor Polarity:P Channel, Continuous Dra 制造商:Vishay Intertechnologies 功能描述:P-CHANNEL 20-V (D-S) MOSFET |
| SI2400 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:V.22BIS ISOMODEM⑩ WITH INTEGRATED GLOBAL DAA |
| SI2400-BS | 功能描述:电信线路管理 IC CONTACT SILICON LABS FOR AVAILABILITY RoHS:否 制造商:STMicroelectronics 产品:PHY 接口类型:UART 电源电压-最大:18 V 电源电压-最小:8 V 电源电流:30 mA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:VFQFPN-48 封装:Tray |
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