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| 型号： | SI3443DV |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4A SSOT-6 |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | SI3443DVFSDKR |
April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
? Load switch
? Battery protection
? Power management
?
?
?
?
?
-4 A, -20 V. R DS(ON) = 0.065 ? @ V GS = -4.5 V
R DS(ON) = 0.100 ? @ V GS = -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D
S
1
6
D
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
-20
± 8
Units
V
V
I D
Drain Current
Drain Current
- Continuous
- Pulsed
(Note 1)
(Note 1a)
-4
-20
A
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.443
Device
Si3443DV
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
Si3443DV, REV A
相关PDF资料 |
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| SI3454ADV-T1-GE3 | MOSFET N-CH 30V 3.4A 6TSOP |
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| SI3457DV | MOSFET P-CH 30V 4A SSOT-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3443DV_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SI3443DV_Q | 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3443DV-NF073 | 制造商:Vishay Siliconix 功能描述:P-CH MOSFET TSOP-6 20V 65MOHM @ 4.5V - Rail/Tube |
| SI3443DVPBF | 制造商:INTERFET 制造商全称:INTERFET 功能描述:HEXFET Power MOSFET |
| SI3443DV-T1 | 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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