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| 型号： | SI3500-A-GM |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 10/18页 |
| 文件大小： | 192K |
| 描述： | IC POE SWITCH PWR OVER LAN 20QFN |
| 标准包装： | 60 |
| 类型： | 以太网供电开关（PoE） |
| 应用： | IP 电话，LAN 网络供电，网络路由器和交换机 |
| 内部开关： | 是 |
| 电流限制： | 525mA |
| 电源电压： | 42 V ~ 57 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN（5x5） |
| 包装： | 管件 |
| 配用： | SMARTPSE24-KIT-ND - KIT EVAL REF 24PORT SPI/UART SI3480MS8-KIT-ND - KIT EVAL 8PORT SI3480/52/SI3500 |
| 其它名称： | 336-1844-5 |
Si3500
10
Rev. 1.1
for isolated applications) is also routed into the PWM
and determines the slicing of the oscillator.
The PWM controls the switching FET drive circuitry. A
significant advantage of integrating the switching power
FET onto the same monolithic IC as the switching
regulator controller is the ability to precisely adjust the
drive strength and timing to the FET's sizable gate,
resulting in high regulator efficiency. Furthermore,
current-limiting circuitry prevents the switching FET
from sinking too much current, dissipating too much
power, and becoming damaged. Thermal overload
protection provides a secondary level of protection.
The flexibility of the Si3500's switching regulator allows
the system designer to realize either the isolated or non-
isolated application circuitry using a single device. In
operation, the integration of the switching FET allows
tighter control and more efficient operation than a
general-purpose switching regulator coupled with a
general-purpose external FET.
4. Layout Guidelines
The following are general PCB layout considerations;
reference designs are also available. Due to the unique
high-voltage and high-power design considerations,
Silicon Labs recommends that the reference designs be
followed closely for both BOM and layout. Visit the
Silicon Labs Technical Support web page and register to
submit a technical support request, particularly if you
are not closely following the recommended reference
design.
Care must be taken to connect the thermal pad of the
Si3500 to an appropriate heat spreader. For full-power
applications, a 2 square in plane with at least 9 thermal
vias is recommended. This heat spreader must be
electrically connected to the negative input power
supply.
Care must also be taken in layout to avoid EMI and
EMC. Input and output filter capacitors are normally
ceramic capacitors for high-frequency performance in
parallel with electrolytic capacitors for load transient
performance. The ceramic capacitors in particular
should be placed so as to minimize radiation for the
high-current paths of the switching regulator. The
circular area of current flow with the FET on and FET off
should be minimized. The direction of current flow with
FET on and FET off should maintain a constant
clockwise or counterclockwise rotation.
For EMI reduction, a 4 layer design with inner layers
connected to the positive input and Vss (for isolated
applications) or Vout (for non-isolated applications) is
recommended. The high-current paths should not flow
through these shield planes. Connection of the dc-to-dc
converter high-current paths to the shield plane should
be at a single point. Refer to the Si3452 reference
design databases for additional layout guideline details.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3500-A-GMR | 功能描述:直流/直流开关转换器 -57V to +3.3V DC/DC converter RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| SI3529DV-T1-E3 | 功能描述:MOSFET 40V 2.25/1.76A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3529DV-T1-GE3 | 功能描述:MOSFET 40V 2.2/2.3A 1.4W 125/215mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3529DV-T1-GE3 | 制造商:Vishay Siliconix 功能描述:DUAL N/P CHANNEL MOSFET 40V TSOP |
| Si3540 | 功能描述:电机驱动器 PKG 3.5A 40VDC IND RoHS:否 制造商:Applied Motion 电机驱动类型:2035 Step 电源电压:12 V to 35 V 功率额定值:70 W 每转步距分辨率:200 to 400 框架大小 (NEMA): |
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