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参数资料
| 型号： | SI3865CDV-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SWITCH LVL SHIFT 6-TSOP |
| 标准包装： | 3,000 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 130 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.8A |
| 输入电压： | 1.8 V ~ 12 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
New Product
Si3865CDV
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
FEATURES
V DS2 (V) (V IN )
1.8 to 12
R DS(on) ( ? )
0.060 at V IN = 4.5 V
0.095 at V IN = 2.5 V
0.130 at V IN = 1.8 V
I D (A)
2.8
2.2
1.9
? Halogen-free According to IEC 61249-2-21
Definition
? 60 m ? Low R DS(on) TrenchFET ?
? 1.8 V to 12 V Input
? 1.5 V to 8 V Logic Level Control
? Low Profile, Small Footprint TSOP-6 Package
? 3000 V ESD Protection On Input Switch, V ON/OFF
? Adjustable Slew-Rate
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switching for Portable Devices
DESCRIPTION
The Si3865CDV includes a P- and N-Channel MOSFET in a
single TSOP-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a level-
shift to drive the P-Channel load-switch. The N-Channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3865CDV operates on
supply lines from 1.8 to 12 V, and can drive loads up to 2.8 A.
APPLICATION CIRCUITS
Si3865CDV
45
V IN
4
2, 3
V OUT
t d(off)
R1
6
Q2
6
C1
36
I L = 1 A
V O N /OFF = 3 V
27
C i = 10 μF
C o = 1 μF
t f
ON/OFF
5
C o
LOAD
1 8
Q1
9
t d(on)
C i
1
t r
R2
0
0
2
4
6
8
10
R2
COMPONENTS
R1 Pull-Up Resistor
GND
Typical 10 k ? to 1 M ? *
R2 (k Ω )
Switching Variation
R2 at V IN = 2.5 V, R1 = 20 k ?
The Si3865CDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
R2
C1
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 0 to 100 k ? *
Typical 1000 pF
slew rate is set externally so that rise-times can be tailored to
different load types.
Note:
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on at 1.8 V input.
Document Number: 69010
S10-2142-Rev. C, 20-Sep-10
www.vishay.com
1
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相关代理商/技术参数 |
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| SI3865CDV-T1-GE3 | 功能描述:MOSFET 12V 2.8A 0.83W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| SI3865DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:iLoad Switch with Level-Shift |
| SI3865DV-T1 | 功能描述:电源开关 IC - 配电 8V 2.7A 0.83W RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| SI3867DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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