参数资料
型号: SI3865CDV-T1-E3
厂商: Vishay Siliconix
文件页数: 2/10页
文件大小: 0K
描述: IC LOAD SWITCH LVL SHIFT 6-TSOP
标准包装: 3,000
类型: 高端开关
输出数: 1
Rds(开): 130 毫欧
内部开关:
电流限制: 2.8A
输入电压: 1.8 V ~ 12 V
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.065",1.65mm 宽)
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
New Product
Si3865CDV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3865CDV
TSOP-6
Top View
S2
4
Q2
2, 3
D2
R2
D2
1
2
6
5
R1, C1
ON/OFF
6
R1, C1
ON/OFF
5
Q1
D2
3
4
S2
Ordering Information: Si3865CDV-T1-E3 (Lead (Pb)-free)
Si3865CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
R2
1
Parameter
Input Voltage
Gate-Source Voltage
ON/OFF Voltage
Symbol
V IN (V DS2 )
V GS2
V ON/OFF (V GS1 )
Limit
12
8
8
Unit
V
Load Current
Continuous Intrinsic Diode Conduction a
Continuous a, b
Pulsed b, c
I L
I S
± 2.8
±6
-1
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ? )
P D
T J , T stg
ESD
0.83
- 55 to 150
3
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (continuous current)
Maximum Junction-to-Foot (Q2)
a
R thJA
R thJF
130
75
150
90
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
I FL
V IN = 12 V, V ON/OFF = 0 V
1
μ A
Diode Forward Voltage
V SD
I S = - 1 A
- 0.77
-1
V
ON Characteristics
Input Voltage Range
V IN (V DS2 )
V IN = 4.5 V
1.8
0.050
12
0.060
V
On-Resistance (P-Channel) at 1 A
R DS(on)
V ON/OFF = 1.5 V, I D = 1 A
V IN = 2.5 V
0.073
0.095
?
V IN = 1.8 V
0.100
0.130
On-State (P-Channel) Drain-Current
I D(on)
V IN-OUT ?? 0.2 V, V IN = 5 V, V ON/OFF = 1.5 V
V IN-OUT ?? 0.3 V, V IN = 3 V, V ON/OFF = 1.5 V
1
1
A
Notes:
a. Surface Mounted on FR4 board.
b. V IN = 8 V, V ON/OFF = 8 V, T A = 25 °C.
c. Pulse test: pulse width ?? 300 μ s, duty cycle ?? 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69010
S10-2142-Rev. C, 20-Sep-10
相关PDF资料
PDF描述
EBM22DRTF CONN EDGECARD 44POS DIP .156 SLD
0982660817 CBL 13POS 0.5MM JMPR TYPE A 4"
AD9204-65EBZ BOARD EVALUATION 65MSPS AD9204
EBM30DRSN CONN EDGECARD 60POS DIP .156 SLD
AD9204-80EBZ BOARD EVALUATION 80MSPS AD9204
相关代理商/技术参数
参数描述
SI3865CDV-T1-GE3 功能描述:MOSFET 12V 2.8A 0.83W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si3865DDV-T1-GE3 制造商:Vishay Semiconductors 功能描述:CNAD SWITCH WITH LEVEL-SHIFT - Tape and Reel 制造商:Vishay Siliconix 功能描述:IC LOAD SWITCH LVL SHIFT 6TSOP 制造商:Vishay Intertechnologies 功能描述:N / P-Channel 12 V 0.054 O Surface Mount Mosfet Load Switch - TSOP-6 制造商:Vishay Intertechnologies 功能描述:Dual N / P-Channel 12 V 0.054 O Surface Mount Mosfet Load Switch - TSOP-6 制造商:Vishay Intertechnologies 功能描述:Power Switch ICs - Power Distribution 12V 2.8A .83W
SI3865DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:iLoad Switch with Level-Shift
SI3865DV-T1 功能描述:电源开关 IC - 配电 8V 2.7A 0.83W RoHS:否 制造商:Exar 输出端数量:1 开启电阻(最大值):85 mOhms 开启时间(最大值):400 us 关闭时间(最大值):20 us 工作电源电压:3.2 V to 6.5 V 电源电流(最大值): 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5
SI3867DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET