参数资料
型号: SI3909DV-T1-E3
厂商: Vishay Siliconix
文件页数: 5/10页
文件大小: 0K
描述: MOSFET 2P-CH 20V 6TSOP
标准包装: 3,000
系列: TrenchFET®
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
开态Rds(最大)@ Id, Vgs @ 25° C: 200 毫欧 @ 1.8A,4.5V
Id 时的 Vgs(th)(最大): 500mV @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 4.5V
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.065",1.65mm 宽)
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70968 .
Document Number: 70968
S09-2276-Rev. B, 02-Nov-09
www.vishay.com
5
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