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参数资料
| 型号： | SI4814BDY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH/SCHOTTKY 30V 8SOIC |
| 标准包装： | 2,500 |
| 系列： | LITTLE FOOT® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A，10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 功率 - 最大： | 3.3W，3.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si4814BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Dynamic a
Turn-On Delay Time
Rise Time
t d(on)
t r
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
8
9
11
13
15
15
18
20
Turn-Off Delay Time
t d(off)
Channel-2
V DD = 15 V, R L = 15 Ω
Ch-1
Ch-2
21
27
32
40
ns
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t f
t rr
Q rr
t a
t b
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
I F = 1.3 A, dI/dt = 100 A/μs
I F = 2.2 A, dI/dt = 100 μA/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
6
9
28
24
17
12
12
11
16
13
10
15
40
35
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V R = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V R = 30 V, T J = 100 °C
0.7
10
mA
V R = - 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V R = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73278
S09-0394-Rev. C, 09-Mar-09
www.vishay.com
3
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| SI4814BDY-T1-GE3 | 功能描述:MOSFET 30V 10/10.5A 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4814DY | 功能描述:MOSFET 30V 7/7.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4814DY-E3 | 功能描述:MOSFET 30V 7/7.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4814DY-T1-E3 | 功能描述:MOSFET 30 Volt 7.0/7.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4816BDY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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