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| 型号： | SI4914DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CH 30V 8-SOIC |
| 产品目录绘图： | DY-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A，5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 功率 - 最大： | 1.1W，1.16W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | SI4914DY-T1-E3DKR |
Si4914DY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
1.0
1.0
2.5
2.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 7.0 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
20
0.019
100
100
1
500
0.015
20
0.023
nA
μA
mA
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 7.4 A
V GS = 4.5 V, I D = 5.6 A
Ch-2
Ch-1
0.016
0.026
0.020
0.032
Ω
V GS = 4.5 V, I D = 6.4 A
Ch-2
0.022
0.027
Forward Transconductance b
g fs
V DS = 15 V, I D = 7.0 A
V DS = 15 V, I D = 7.4 A
Ch-1
Ch-2
19
22
S
Diode Forward Voltage b
V SD
I S = 1.7 A, V GS = 0 V
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.75
0.36
1.1
0.40
V
Dynamic a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 7.0 A
Channel-2
V DS = 15 V, V GS = 4.5 V, I D = 7.4 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
5.6
7.3
2.3
2.8
1.7
2.2
8.5
11
nC
Gate Resistance
Turn-On Delay Time
Rise Time
R g
t d(on)
t r
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.5
2.3
1.6
6
7
13
13
3.6
2.5
10
11
20
20
Ω
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
Channel-2
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.3 A, di/dt = 100 A/μs
I F = 2.2 A, di/dt = 100 μA/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
27
35
9
10
30
30
40
53
15
15
50
50
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 150 °C
Min
Typ
0.36
0.27
Max
0.40
0.31
Unit
V
V r = 30 V
0.008
0.50
Maximum Reverse Leakage Current
I rm
V r = 30 V, T J = 100 °C
3.5
10
mA
V r = - 30 V, T J = 125 °C
10
100
Junction Capacitance
C T
V r = 10 V
58
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4916DY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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| SI4920DY | 功能描述:MOSFET SO8 DUAL NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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