参数资料
型号: SI5317B-C-GMR
厂商: SILICON LABORATORIES
元件分类: 时钟产生/分配
英文描述: 350 MHz, OTHER CLOCK GENERATOR, QCC36
封装: 6 X 6 MM, ROHS COMPLIANT, MO-220VJJD, QFN-36
文件页数: 5/46页
文件大小: 407K
代理商: SI5317B-C-GMR
Si5317
Rev. 1.1
13
Table 6. Thermal Characteristics
(VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Thermal Resistance
Junction to Ambient
JA
Still Air
32
C/W
Thermal Resistance
Junction to Case
JC
—14
C/W
Table 7. Absolute Maximum Limits
Parameter
Symbol
Value
Unit
DC Supply Voltage
VDD
–0.5 to 3.8
V
LVCMOS Input Voltage
VDIG
–0.3 to (VDD + 0.3)
V
CKINn Voltage Level Limits
CKNVIN
0 to VDD
V
XA/XB Voltage Level Limits
XAVIN
0 to 1.2
V
Operating Junction Temperature
TJCT
–55 to 150
C
Storage Temperature Range
TSTG
–55 to 150
C
ESD HBM Tolerance (100 pF, 1.5 k
); All pins except
CKIN+/CKIN–
2kV
ESD MM Tolerance; All pins except CKIN+/CKIN–
150
V
ESD HBM Tolerance (100 pF, 1.5 k
); CKIN+/CKIN–
750
V
ESD MM Tolerance; CKIN+/CKIN–
100
V
Latch-Up Tolerance
JESD78 Compliant
Note: Permanent device damage may occur if the Absolute Maximum Ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operation sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods of time may affect device reliability.
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