- 您现在的位置：买卖IC网 > Datasheet目录511 > SI5402DC-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 30V 1206-8 Datasheet资料下载
参数资料
| 型号： | SI5402DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5402DC
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 85 °C
V DS ≥ 5 V, V GS = 10 V
1.0
20
± 100
1
5
V
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 4.9 A
V GS = 4.5 V, I D = 3.9 A
V DS = 10 V, I D = 4.9 A
0.030
0.045
15
0.035
0.055
Ω
S
Diode Forward Voltage
a
V SD
I S = 1.1 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
13
20
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = 15 V, V GS = 10 V, I D = 4.9 A
V DD = 15 V, R L = 15 Ω
1.3
3.1
10
10
15
15
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.1 A, dI/dt = 100 A/μs
25
10
30
40
15
60
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
V GS = 10 thru 5 V
16
12
8
4V
20
16
12
8
4
0
3V
4
0
T C = 125 °C
25 °C
- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
Document Number: 71062
S09-1503-Rev. D, 10-Aug-09
相关PDF资料 |
PDF描述 |
|---|---|
| SI5403DC-T1-GE3 | MOSFET P-CH 30V 6A 1206-8 |
| SI5432DC-T1-GE3 | MOSFET N-CH 20V 6A 1206-8 |
| SI5440DC-T1-GE3 | MOSFET N-CH D-S 30V 1206-8 |
| SI5441DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
| SI5443DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5402DC-T2 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5402DC-T3 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5403DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI5403DC-T1-GE3 | 功能描述:MOSFET 30V 6.0A 6.3W 30mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5404BDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。