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参数资料
| 型号： | SI5402DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
AN811
Vishay Siliconix
Front of Board
ChipFET r
FIGURE 3.
Back of Board
vishay.com
Single EVB
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(the Package Performance)
Thermal performance for the 1206-8 ChipFET measured as
junction-to-foot thermal resistance is 15 _ C/W typical, 20 _ C/W
maximum for the single device. The “foot” is the drain lead of
the device as it connects with the body. This is identical to the
SO-8 package R Q jf performance, a feat made possible by
shortening the leads to the point where they become only a
small part of the total footprint area.
The results show that a major reduction can be made in the
thermal resistance by increasing the copper drain area. In this
example, a 45 _ C/W reduction was achieved without having to
increase the size of the board. If increasing board size is an
option, a further 33 _ C/W reduction was obtained by
maximizing the copper from the drain on the larger 1” square
pcb.
160
120
Junction-to-Ambient Thermal Resistance
(dependent on pcb size)
The typical R Q ja for the single-channel 1206-8 ChipFET is
80 _ C/W steady state, compared with 68 _ C/W for the SO-8.
Maximum ratings are 95 _ C/W for the 1206-8 versus 80 _ C/W
for the SO-8.
Testing
80
40
Min. Footprint
1” Square PCB
To aid comparison further, Figure 4 illustrates ChipFET 1206-8
thermal performance on two different board sizes and three
different pad patterns. The results display the thermal
performance out to steady state and produce a graphic
account of how an increased copper pad area for the drain
connections can enhance thermal performance. The
measured steady state values of R Q ja for the single 1206-8
ChipFET are :
1) Minimum recommended pad pattern (see 156 _ C/W
Figure 2) on the evaluation board size of
0.5 in x 0.6 in.
2) The evaluation board with the pad pattern 111 _ C/W
described on Figure 3.
0
10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Time (Secs)
FIGURE 4. Single 1206 ? 8 ChipFET
SUMMARY
The thermal results for the single-channel 1206-8 ChipFET
package display similar power dissipation performance to the
SO-8 with a footprint reduction of 80%. Careful design of the
package has allowed for this performance to be achieved. The
short leads allow the die size to be maximized and thermal
resistance to be reduced within the confines of the TSOP-6
body size.
ASSOCIATED DOCUMENT
3) Industry standard 1” square pcb with
maximum copper both sides.
www.vishay.com
2
78 _ C/W
1206-8 ChipFET Dual Thermal performance, AN812
(http://www.vishay.com/doc?71127) .
Document Number: 71126
12-Dec-03
相关PDF资料 |
PDF描述 |
|---|---|
| SI5403DC-T1-GE3 | MOSFET P-CH 30V 6A 1206-8 |
| SI5432DC-T1-GE3 | MOSFET N-CH 20V 6A 1206-8 |
| SI5440DC-T1-GE3 | MOSFET N-CH D-S 30V 1206-8 |
| SI5441DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
| SI5443DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5402DC-T2 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5402DC-T3 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5403DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI5403DC-T1-GE3 | 功能描述:MOSFET 30V 6.0A 6.3W 30mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5404BDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) MOSFET |
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