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| 型号： | SI5504DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V CHIPFET 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.5nC @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5504DC
Vishay Siliconix
Complementary 30 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
R DS(on) ( Ω )
I D (A)
? Halogen-free According to IEC 61249-2-21
Definition
N-Channel
P-Channel
30
- 30
0.085 at V GS = 10 V
0.143 at V GS = 4.5 V
0.165 at V GS = - 10 V
0.290 at V GS = - 4.5 V
± 3.9
± 3.0
± 2.8
± 2.1
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
D 1
1206-8 ChipFET ?
1
S 1
G 1
D 1
S 2
D 1
D 2
S 2
G 2
Marking Code
EA XX
G 1
G 2
D 2
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free)
Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
30
± 20
5s
Steady State
- 30
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
± 3.9
± 2.8
± 2.9
± 2.1
± 10
± 2.8
± 2.0
± 2.1
± 1.5
A
Continuous Source Current (Diode Conduction) a
I S
1.8
0.9
- 1.8
- 0.9
Maximum Power Dissipation a
T A = 25 °C
T A = 85 °C
P D
2.1
1.1
1.1
0.6
2.1
1.1
1.1
0.6
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
50
90
30
60
110
40
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
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| SI5511DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET |
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