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| 型号： | SI5513CDC-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/16页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V CHIPFET 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A，3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 4.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 285pF @ 10V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5513CDC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
N-Channel
P-Channel
20
- 20
0.055 at V GS = 4.5 V
0.085 at V GS = 2.5 V
0.150 at V GS = - 4.5 V
0.255 at V GS = - 2.5 V
4 g
4 g
- 3.7
- 2.9
2.6 nC
3.6 nC
? TrenchFET ? Power MOSFETs
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
1206-8 ChipFET ?
? Load Switch for Portable Devices
D 1
S 1
G 1
1
D 1
S 2
D 1
D 2
S 2
G 2
Marking Code
EG XXX
Lot Tracea b ility
G 1
G 2
D 2
and Date Code
Part # Code
Bottom V ie w
S 1
D 2
Orderin g Information: Si5513CDC-T1-E3 (Lead (P b )-free)
N -Channel MOSFET
P-Channel MOSFET
Si5513CDC -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
20
± 12
- 20
V
T C = 25 °C
4 g
- 3.7
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
4 g
4 b, c, g
3.5 b, c
10
2.6
1.4 b, c
3.1
- 3.0
- 2.4 b, c
- 1.9 b, c
-8
- 2.6
- 1.7 b, c
3.1
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.0
1.7 b, c
2.0
1.3 b, c
W
T A = 70 °C
1.1 b, c
0.8 b, c
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
62
32
74
40
77
33
95
40
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 115 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5513CDC-T1-GE3 | 功能描述:MOSFET 20V 4A/3.7A N/P-CH COMPLIMENTARY MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5513DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary 20-V (D-S) MOSFET |
| SI5513DC-T1 | 功能描述:MOSFET 20V 4.2/2.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5513DC-T1-E3 | 功能描述:MOSFET 20V 4.2/2.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5513DC-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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