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| 型号： | SI5511DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V 1206-8 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A，3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 4.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 435pF @ 15V |
| 功率 - 最大： | 3.1W，2.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | SI5511DC-T1-GE3DKR |
Si5511DC
Vishay Siliconix
N- and P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
N-Channel
P-Channel
V DS (V)
30
- 30
R DS(on) ( Ω )
0.055 at V GS = 4.5 V
0.090 at V GS = 2.5 V
0.150 at V GS = - 4.5 V
0.256 at V GS = - 2.5 V
I D (A)
4 a,g
4 a,g
- 3.6 a
- 2.7 a
Q g (Typ.)
4.2 nC
2.85 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Buck-Boost
1206-8 ChipFET ?
1
- DSC
- Portable Devices
S 1
D 1
S 2
D 1
G 1
D 1
S 2
Marking Code
G 2
D 2
G 2
EE
XXX
Lot Tracea b ility
G 1
D 2
and Date Code
Part # Code
Bottom V ie w
Orderin g Information: Si5511DC-T1-E3 (Lead (P b )-free)
Si5511DC -T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
30
± 12
- 30
V
T C = 25 °C
4 a, g
- 3.6 a
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
4 a, g
4 a, g
3.9 a
15
2.6
1.7 b, c
3.1
- 2.8 a
- 2.3 b, c
- 1.8 b, c
- 10
- 2.6
- 1.7 b, c
2.6
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.0
2.1 b, c
1.7
1.3 b, c
W
T A = 70 °C
1.33 b, c
0.84 b, c
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Maximum Junction-to-Ambient b, f t ≤ 5s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typ. Max. Typ. Max.
50 60 77 95
30 40 33 40
Unit
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
1
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| SI5513CDC-T1-E3 | 功能描述:MOSFET 20V 4.0/3.7A 3.1W 55/150mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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