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参数资料
| 型号： | SI5980DU-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V PPAK CHIPFET |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 567 毫欧 @ 400mA，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 78pF @ 50V |
| 功率 - 最大： | 7.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? CHIPFET? 双 |
| 供应商设备封装： | PowerPAK? ChipFet 双 |
| 包装： | 标准包装 |
| 其它名称： | SI5980DU-T1-GE3DKR |
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Document Number: 91000
Revision: 18-Jul-08
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相关代理商/技术参数 |
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| SI-5L1.880G | 制造商:HITACHIMETAL 功能描述: |
| Si5XX5X7-EVB | 功能描述:时钟和定时器开发工具 XO / VCXO Device Evaluation Board RoHS:否 制造商:Texas Instruments 产品:Evaluation Modules 类型:Clock Conditioners 工具用于评估:LMK04100B 频率:122.8 MHz 工作电源电压:3.3 V |
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