参数资料
型号: SI6404DQ-T1-E3
厂商: Vishay Siliconix
文件页数: 8/10页
文件大小: 0K
描述: MOSFET N-CH 30V 8.6A 8TSSOP
标准包装: 3,000
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 11A,10V
Id 时的 Vgs(th)(最大): 600mV @ 250µA
闸电荷(Qg) @ Vgs: 48nC @ 4.5V
功率 - 最大: 1.08W
安装类型: 表面贴装
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
AN806
Vishay Siliconix
Mounting LITTLE FOOT R TSSOP-8 Power MOSFETs
Wharton McDaniel
0.026
0.66
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFET, ( http://www.vishay.com/doc?72286 ), for the basis
of the pad design for a LITTLE FOOT TSSOP-8 power MOSFET
package footprint. In converting the footprint to the pad set for a
power device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The pad patterns with copper spreading for the single-MOSFET
TSSOP-8 (Figure 1) and dual-MOSFET TSSOP-8 (Figure 2)
show the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of copper
overlies the drain pins. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. These patterns
use all the available area underneath the body for this purpose.
0.284
7.6
0.032
0.8
0.122
3.1
0.018
0.45
0.073
0.091
In the case of the TSSOP-8 package, the thermal connections
are very simple. Pins 1, 5, and 8 are the drain of the MOSFET
for a single MOSFET package and are connected together. In
the dual package, pins 1 and 8 are the two drains. For a
small-signal device or integrated circuit, typical connections
would be made with traces that are 0.020 inches wide. Since
the drain pins also provide the thermal connection to the
package, this level of connection is inadequate. The total
cross section of the copper may be adequate to carry the
current required for the application, but it presents a large
thermal impedance. Also, heat spreads in a circular fashion
from the heat source. In this case the drain pins are the heat
sources when looking at heat spread on the PC board.
1.78 1.65
FIGURE 2. Dual MOSFET TSSOP-8 Pad Pattern with
Copper Spreading
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
0.032
0.8
0.018
0.45
0.284
7.6
0.026
0.66
0.122
3.1
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
0.073
1.78
0.118
3.54
FIGURE 1. Single MOSFET TSSOP-8 Pad
Pattern with Copper Spreading
Document Number: 70738
17-Dec-03
www.vishay.com
1
相关PDF资料
PDF描述
MB2411S1W01-HC SWITCH PUSHBUTTON SPDT 3A 125V
SFELF10M7FA00-A0 FILTER 10.7MHZ 280KHZ BAND RADIA
L4K212BJ104MD-T CAP ARRAY 4CH 0.1UF 10V 0805
3386Y-1-503LF TRIMMER 50K OHM 0.5W TH
MB2411S1W01-HB SWITCH PUSHBUTTON SPDT 3A 125V
相关代理商/技术参数
参数描述
SI6404DQ-T1-GE3 功能描述:MOSFET 30V 11A 1.75W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6405DQ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI6410DQ 功能描述:MOSFET 30V/20V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6410DQ-T1 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6410DQ-T1-E3 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube