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| 型号： | SI7404DN-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V PPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 13.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 带卷 (TR) |
Si7404DN
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( ? )
0.013 at V GS = 10 V
0.015 at V GS = 4.5 V
0.022 at V GS = 2.5 V
I D (A)
13.3
12.4
10.2
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PowerPAK ? 1212-8
? Li-lon Battery Protection
3.30 mm
1
S
S
3.30 mm
D
2
3
S
G
4
D
8
7
D
D
G
6
D
5
Bottom View
S
Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free)
Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
30
± 12
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
0.1 mH
T A = 25 °C
T A = 70 °C
I D
I DM
I AS
E AS
I S
P D
13.3
10.6
3.2
3.8
2.0
40
15
11
8.5
6.8
1.3
1.5
0.8
A
mJ
A
W
Operating Junction and Storage Temperature Range
Soldering Recommendations b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t ?? 10 s
Steady State
R thJA
26
65
33
81
°C/W
Maximum Junction-to-Case (Drain) Steady State R thJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7404DN-T1-GE3 | 功能描述:MOSFET 30V 13.3A 3.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405BDN-T1-E3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405BDN-T1-GE3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405DN-T1 | 功能描述:MOSFET 12V 13A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405DN-T1-E3 | 功能描述:MOSFET 12V 13A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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