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| 型号： | SI7409ADN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 30V PPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19 毫欧 @ 11A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 带卷 (TR) |
Si7409ADN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.019 at V GS = - 4.5 V
0.031 at V GS = - 2.5 V
I D (A)
- 11
- 8.5
Q g (Typ.)
25
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? V DS Optimized for Load Switch
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? Load Switch
3.30 mm
1
S
S
3.30 mm
S
2
3
S
G
8
D
7
D
6
D
D
5
Bottom View
4
G
D
Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free)
Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 11
- 7.9
- 40
-7
-5
A
Continuous Source Current (Diode Conduction) a
I S
- 3.2
- 1.3
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
3.8
2.0
- 55 to 150
260
1.5
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73246
S-83051-Rev. C, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7409DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI7409DN-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin PowerPAK 1212 T/R |
| SI7411DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7411DN-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 20V 7.5A 8-Pin PowerPAK 1212 T/R |
| SI7411DN-T1-E3 | 功能描述:MOSFET 20V 11A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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