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| 型号： | SI7431DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 200V 2.2A 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 174 毫欧 @ 3.8A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7431DP-T1-GE3DKR |
Si7431DP
Vishay Siliconix
P-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 200
R DS(on) ( ? )
0.174 at V GS = - 10 V
0.180 at V GS = - 6 V
I D (A)
- 3.8
- 3.6
Q g (Typ.)
88
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Ultra-Low On-Resistance Critical for
Application
? Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
PowerPAK SO-8
? 100 % R g and Avalanche Tested
? Compliant to RoHS Directive 2002/95/EC
6.15 mm
1
S
2
S
S
5.15 mm
APPLICATIONS
? Active Clamp in Intermediate
S
3
4
G
DC/DC Power Supplies
8
D
7
D
D
G
6
5
D
Bottom View
Ordering Information: Si7431DP-T1-E3 (Lead (Pb)-free)
Si7431DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 200
± 20
Unit
V
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T J = 150°C) a
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
a
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
E AS
- 3.8
- 3.0
- 4.2
- 30
- 30
45
- 2.2
- 1.8
- 1.6
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5.4
3.4
- 55 to 150
260
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
Steady State
R thJA
R thJC
18
50
1.0
23
65
1.5
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7434DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-CHANNEL 250-V (D-S) MOSFET |
| SI7434DP_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) MOSFET |
| SI7434DP-T1-E3 | 功能描述:MOSFET 250V 3.8A 5.2W 155mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7434DP-T1-GE3 | 功能描述:MOSFET 250V 3.8A 5.2W 155mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7439DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 150-V (D-S) MOSFET |
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