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| 型号： | SI7454CDP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 580pF @ 50V |
| 功率 - 最大： | 29.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7454CDP-T1-GE3DKR |
New Product
Si7454CDP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
I D (A)
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.0305 at V GS = 10 V
22
a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
100
0.033 at V GS = 7.5 V
0.043 at V GS = 4.5 V
21
18.5
9.5 nC
? 100 % R g Tested
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK ? SO-8
APPLICATIONS
? DC/DC Primary Side Switch
6.15 mm
1
S
2
S
S
5.15 mm
? Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
? Industrial
D
D
3
4
G
8
7
D
D
6
D
5
Bottom View
G
Ordering Information: Si7454CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
100
± 20
22
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
17.6
8.1 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
6.5 b, c
40
22
3.7 b, c
15
11.2
A
mJ
T C = 25 °C
29.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
19
4.1 b, c
W
T A = 70 °C
2.6 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
24
3.3
30
4.2
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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