- 您现在的位置：买卖IC网 > Datasheet目录513 > SI7460DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH 60V 11A PPAK 8SOIC Datasheet资料下载
参数资料
| 型号： | SI7460DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.6 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1663 (CN2011-ZH PDF) |
| 其它名称： | SI7460DP-T1-GE3DKR |
Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
60
R DS(on) ( Ω )
0.0096 at V GS = 10 V
0.012 at V GS = 4.5 V
I D (A)
18
16
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
1
S
S
5.15 mm
2
3
S
G
D
4
D
8
7
D
D
6
5
D
G
Bottom V ie w
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
60
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Avalanche Energy
T A = 25 °C
T A = 70 °C
I D
I DM
I S
I AS
E AS
18
14
4.3
40
50
125
11
8
1.6
A
mJ
Maximum Power Dissipation
a
T A = 25 °C
T A = 70 °C
P D
5.4
3.4
1.9
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
18
52
23
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
1.0
1.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7461DP-T1-GE3 | MOSFET P-CH 60V 8.6A PPAK 8SOIC |
| SI7462DP-T1-GE3 | MOSFET N-CH D-S 200V 8-SOIC |
| SI7465DP-T1-GE3 | MOSFET P-CH 60V 3.2A PPAK 8SOIC |
| SI7530DP-T1-GE3 | MOSFET N/P-CH 60V PWRPAK 8-SOIC |
| SI7620DN-T1-GE3 | MOSFET N-CH 150V 13A 1212-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7461DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI7461DP_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI7461DP-T1 | 功能描述:MOSFET 60V 14.4A 1.9W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7461DP-T1-E3 | 功能描述:MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7461DP-T1-GE3 | 功能描述:MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。