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| 型号： | SI7461DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 8.6A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14.5 毫欧 @ 14.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 190nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1665 (CN2011-ZH PDF) |
| 其它名称： | SI7461DP-T1-GE3DKR |
Si7461DP
www.vishay.com
P-Channel 60 V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.0145 at V GS = -10 V
-60
0.019 at V GS = -4.5 V
I D (A)
-14.4
-12.6
FEATURES
? TrenchFET ? Power MOSFETs
? Low thermal resistance PowerPAK ? package
with low 1.07 mm profile
? Material categorization:
For definitions of compliance please see
PowerPAK SO-8
www.vishay.com/doc?99912
S
Availa b le
6.15 mm
1
S
S
5.15 mm
2
3
S
G
D
4
G
8
7
D
D
6
5
D
Bottom View
Ordering Information: Si7461DP-T1-E3 (Lead (Pb)-free)
Si7461DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwis e noted)
D
P-Channel MOSFET
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
10 s
STEADY STATE
-60
± 20
UNIT
V
Continuous Drain Current (T J = 150 °C) a
T A = 25 °C
T A = 70 °C
I D
-14.4
-11.5
-8.6
-6.9
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Single Pulse Avalanche Energy
L = 1 mH
I DM
I S
I AS
E AS
-4.5
-60
50
125
-1.6
A
Maximum Power Dissipation a
T A = 25 °C
T A = 70 °C
P D
5.4
3.4
1.9
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T J , T stg
-55 to 150
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
Steady State
R thJA
R thJC
18
52
1
23
65
1.3
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-2282-Rev. H, 04-Nov-13
1
Document Number: 72567
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SI7462DP-T1-GE3 | MOSFET N-CH D-S 200V 8-SOIC |
| SI7465DP-T1-GE3 | MOSFET P-CH 60V 3.2A PPAK 8SOIC |
| SI7530DP-T1-GE3 | MOSFET N/P-CH 60V PWRPAK 8-SOIC |
| SI7620DN-T1-GE3 | MOSFET N-CH 150V 13A 1212-8 |
| SI7625DN-T1-GE3 | MOSFET P-CH D-S 30V 1212-8 PPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7462DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI7462DP-T1-E3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7462DP-T1-GE3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7463ADP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET |
| SI7463DP | 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK |
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