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| 型号： | SI7456DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 5.7A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 9.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1663 (CN2011-ZH PDF) |
| 其它名称： | SI7456DP-T1-GE3DKR |
Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
100
R DS(on) ( Ω )
0.025 at V GS = 10 V
0.028 at V GS = 6.0 V
I D (A)
9.3
8.8
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized for Fast Switching
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
? Primary Side Switch for High Density DC/DC
6.15 mm
1
S
2
S
S
5.15 mm
? Telecom/Server 48 V, Full-/Half-Bridge DC/DC
? Industrial and 42 V Automotive
8
D
7
D
D
3
4
G
D
6
D
5
Bottom View
G
Ordering Information: Si7456DP-T1-E3 (Lead (Pb)-free)
Si7456DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
100
± 20
Unit
V
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T J = 150°C) a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Maximum Power Dissipation a
a
T A = 25 °C
T A = 85 °C
L = 0.1 mH
T A = 25 °C
T A = 85 °C
I D
I DM
I AS
E AS
I S
P D
9.3
6.7
4.3
5.2
2.7
40
30
45
5.7
4.1
1.6
1.9
1.0
A
mJ
A
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case
a
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
19
52
1.5
24
65
1.8
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7457DP-T1-GE3 | MOSFET P-CH D-S 100V PPAK 8SOIC |
| SI7460DP-T1-GE3 | MOSFET N-CH 60V 11A PPAK 8SOIC |
| SI7461DP-T1-GE3 | MOSFET P-CH 60V 8.6A PPAK 8SOIC |
| SI7462DP-T1-GE3 | MOSFET N-CH D-S 200V 8-SOIC |
| SI7465DP-T1-GE3 | MOSFET P-CH 60V 3.2A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7456DP-TI-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):8.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.9W ;RoHS Compliant: Yes |
| SI7457DP-T1-E3 | 功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7457DP-T1-GE3 | 功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7458DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) Fast Switching MOSFET |
| SI7459DP-T1 | 制造商:Vishay Intertechnologies 功能描述:P-Ch PowerPAK SO-8 30V 6.8mohm@10V |
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