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| 型号： | SI7456DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 5.7A PPAK 8SOIC |
| 产品目录绘图： | DP-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 9.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 10V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1663 (CN2011-ZH PDF) |
| 其它名称： | SI7456DP-T1-GE3DKR |
Si7456DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
2
4
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 100 V, V GS = 0 V, T J = 85 °C
V DS ≥ 5 V, V GS = 10 V
40
± 100
1
20
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 9.3 A
V GS = 6.0 V, I D = 8.8 A
V DS = 15 V, I D = 9.3 A
0.021
0.023
35
0.025
0.028
Ω
S
Diode Forward Voltage
a
V SD
I S = 4.3 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
36
44
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 50 V, V GS = 10 V, I D = 9.3 A
10
8.6
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 50 V, R L = 50 Ω
I D ? 1.0 A, V GEN = 10 V, R g = 6 Ω
I F = 4.3 A, dI/dt = 100 A/μs
0.5
1.27
20
10
46
26
50
2.1
40
20
90
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V GS = 10 V thru 6 V
40
32
24
5V
32
24
16
8
16
8
T C = 125 °C
25 °C
0
4V
0
- 55 °C
0
1
2
3
4
5
0
1
2
3
4
5
6
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
相关PDF资料 |
PDF描述 |
|---|---|
| SI7457DP-T1-GE3 | MOSFET P-CH D-S 100V PPAK 8SOIC |
| SI7460DP-T1-GE3 | MOSFET N-CH 60V 11A PPAK 8SOIC |
| SI7461DP-T1-GE3 | MOSFET P-CH 60V 8.6A PPAK 8SOIC |
| SI7462DP-T1-GE3 | MOSFET N-CH D-S 200V 8-SOIC |
| SI7465DP-T1-GE3 | MOSFET P-CH 60V 3.2A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7456DP-TI-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):8.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.9W ;RoHS Compliant: Yes |
| SI7457DP-T1-E3 | 功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7457DP-T1-GE3 | 功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7458DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) Fast Switching MOSFET |
| SI7459DP-T1 | 制造商:Vishay Intertechnologies 功能描述:P-Ch PowerPAK SO-8 30V 6.8mohm@10V |
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