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| 型号： | SI7404DN-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V PPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 13.3A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 带卷 (TR) |
Si7404DN
Vishay Siliconix
MOSFET SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ? 5 V, V GS = 10 V
V GS = 10 V, I D = 13.3 A
40
0.010
± 100
1
5
0.013
nA
μA
A
Drain-Source On-State Resistance
a
R DS(on)
V GS = 4.5 V, I D =12.4 A
0.0125
0.015
?
V GS = 2.5 V, I D = 5 A
0.019
0.022
Forward Transconductance a
g fs
V DS = 5 V, I D = 13.3 A
50
S
Diode Forward Voltage
a
V SD
I S = 3.2 A, V GS = 0 V
0.75
1.2
V
Dynamic b
Total Gate Charge
Q g
20
30
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = 15 V, V GS = 4.5 V, I D = 13.3 A
V DD = 15 V, R L = 15 ?
5.8
7.1
27
39
40
60
nC
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery
Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 4.5 V, R G = 6 ?
I F = 3.2 A, dI/dt = 100 A/μs
64
33
45
100
50
90
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
40
40
35
30
25
20
15
V GS = 10 thru 3 V
2.5 V
35
30
25
20
15
10
5
2V
10
5
T C = 125 °C
25 °C
0
1, 1.5 V
0
- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| SI7404DN-T1-GE3 | 功能描述:MOSFET 30V 13.3A 3.8W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405BDN-T1-E3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405BDN-T1-GE3 | 功能描述:MOSFET 12V 16A 33W 13mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405DN-T1 | 功能描述:MOSFET 12V 13A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7405DN-T1-E3 | 功能描述:MOSFET 12V 13A 3.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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