参数资料
型号: SI8401AB-B-IS
厂商: Silicon Laboratories Inc
文件页数: 4/34页
文件大小: 0K
描述: ISOL DGTL 2.5KVRMS 2CH 8SOIC
视频文件: Digital Isolation Overview
Digital Isolators vs. Optocouplers
标准包装: 96
输入 - 1 侧/2 侧: 2/1
通道数: 2
电源电压: 3 V ~ 5.5 V
电压 - 隔离: 2500Vrms
数据速率: 10Mbps
输出类型: 开路漏极
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
工作温度: -40°C ~ 125°C
Si840x
1. Electrical Specifications
Table 1. Absolute Maximum Ratings 1
Parameter
Storage Temperature 2
Ambient Temperature Under Bias
Supply Voltage (Revision A) 3
Symbol
T STG
T A
V DD
Min
–65
–40
–0.5
Typ
Max
150
125
5.75
Unit
°C
°C
V
Supply Voltage (Revision
B) 3
V DD
–0.5
6.0
V
Input Voltage
Output Voltage
Output Current Drive (non-I 2 C channels)
V I
V O
I O
–0.5
–0.5
V DD + 0.5
V DD + 0.5
±10
V
V
mA
Side A output current drive
(I 2 C
channels)
I O
±15
mA
Side B output current drive (I 2 C channels)
Lead Solder Temperature (10 s)
Maximum Isolation Voltage (1 s)
I O
±75
260
3600
mA
°C
V RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
3. See "7.Ordering Guide" on page 25 for more information.
Table 2. Si840x Power Characteristics*
3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C (See Figures 2 and 16 for test diagrams.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Si8400/01/02 Supply Current
AVDD current
BVDD current
AVDD current
BVDD current
AVDD current
BVDD current
Idda
Iddb
Idda
Iddb
Idda
Iddb
All channels = 0 dc
All channels = 1 dc
All channels = 1.7 MHz
4.2
3.9
2.3
1.9
3.2
2.9
6.3
5.9
3.5
2.9
4.8
4.4
mA
mA
mA
mA
mA
mA
Si8405 Supply Current
AVDD current
BVDD current
AVDD current
BVDD current
AVDD current
BVDD current
Idda
Iddb
Idda
Iddb
Idda
Iddb
All non-I 2 C channels = 0
All I 2 C channels = 1
All non-I 2 C channels = 1
All I 2 C channels = 0
All non-I 2 C channels = 5 MHz
All I 2 C channels = 1.7 MHz
3.2
2.9
6.2
6.0
4.7
4.5
4.8
4.4
9.3
9.0
7.1
6.8
mA
mA
mA
mA
mA
mA
*Note: All voltages are relative to respective ground.
4
Rev. 1.6
相关PDF资料
PDF描述
1587H24C1 POWER STRIP 70" 15A 24OUT 6'C
SI8400AB-B-IS IC ISOLATOR BIDIR I2C 8-SOIC
M-ODC24A OUTPUT MODULE DC 13MA 24VDC
SI8463BB-B-IS1 IC ISOLATOR 6CH 5.5V 16-SOIC
KAL25JB10R0 RES 10 OHM 25W 5% WW ALM
相关代理商/技术参数
参数描述
SI8401AB-B-ISR 功能描述:隔离器接口集成电路 2.5 kV Bidirect I2C Isolator 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8401DB 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI8401DB-T1 功能描述:MOSFET 20V 4.9A 1.47W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8401DB-T1-E1 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI8401DB-T1-E3 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube