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| 型号： | SI8401AB-B-IS |
| 厂商： | Silicon Laboratories Inc |
| 文件页数： | 9/34页 |
| 文件大小： | 0K |
| 描述： | ISOL DGTL 2.5KVRMS 2CH 8SOIC |
| 视频文件： | Digital Isolation Overview Digital Isolators vs. Optocouplers |
| 标准包装： | 96 |
| 输入 - 1 侧/2 侧： | 2/1 |
| 通道数： | 2 |
| 电源电压： | 3 V ~ 5.5 V |
| 电压 - 隔离： | 2500Vrms |
| 数据速率： | 10Mbps |
| 输出类型： | 开路漏极 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 工作温度： | -40°C ~ 125°C |
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Si840x
Table 6. Regulatory Information*
CSA
The Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 300 V RMS reinforced insulation working voltage; up to 600 V RMS basic insulation working voltage.
60950-1: Up to 130 V RMS reinforced insulation working voltage; up to 600 V RMS basic insulation working voltage.
VDE
The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 560 V peak for basic insulation working voltage.
UL
The Si84xx is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 2500 V RMS isolation voltage for basic insulation.
*Note: Regulatory Certifications apply to 2.5 kV RMS rated devices which are production tested to 3.0 kV RMS for 1 sec.
For more information, see "7.Ordering Guide" on page 25.
Table 7. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
NB SOIC-8
NB SOIC-16
Nominal Air Gap (Clearance)
1
L(1O1)
4.9
4.9
mm
Nominal External Tracking (Creepage) 1
Minimum Internal Gap
L(1O2)
4.01
0.008
4.01
0.008
mm
mm
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
Resistance (Input-Output) 2
PTI
ED
R IO
IEC60112
600
0.040
10 12
600
0.019
10 12
V RMS
mm
?
Capacitance
(Input-Output) 2
C IO
f = 1 MHz
1.0
2.0
pF
Input Capacitance 3
C I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “8. Package Outline:
8-Pin Narrow Body SOIC” and “10. Package Outline: 16-Pin Narrow Body SOIC”. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-8 package and 4.7 mm minimum for the NB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the
clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 package and 3.9 mm minimum for the NB
SOIC-16 package.
2. To determine resistance and capacitance, the Si840x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1-4, SO-
8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Rev. 1.6
9
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| SI8401AB-B-ISR | 功能描述:隔离器接口集成电路 2.5 kV Bidirect I2C Isolator 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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| SI8401DB-T1-E1 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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