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参数资料
| 型号： | SI8401DB-T1 |
| 厂商： | Vishay Intertechnology,Inc. |
| 元件分类： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局长）MOSFET的低阈值 |
| 文件页数： | 2/5页 |
| 文件大小： | 83K |
| 代理商： | SI8401DB-T1 |
Si8401DB
Vishay Siliconix
www.vishay.com
2
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.45
0.9
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1
A
V
DS
=
20 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
4.5 V
5
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
1 A
0.057
0.065
V
GS
=
2.5 V, I
D
=
1 A
0.080
0.095
Forward Transconductance
a
g
fs
V
DS
=
10
V, I
D
=
1 A
6
S
Diode Forward Voltage
a
V
SD
I
S
=
1 A, V
GS
= 0 V
0.73
1.1
V
Dynamic
b
Total Gate Charge
Q
g
11
17
Gate-Source Charge
Q
gs
V
DS
=
10 V,
V
GS
=
4.5 V, I
D
=
1 A
2.1
nC
Gate-Drain Charge
Q
gd
2.9
Turn-On Delay Time
t
d(on)
17
25
Rise Time
t
r
V
=
10 V, R
= 10
1 A, V
GEN
=
4.5 V, R
G
= 6
28
45
Turn-Off Delay Time
t
d(off)
I
D
88
135
ns
Fall Time
t
f
60
90
Source-Drain Reverse Recovery Time
t
rr
I
F
=
A, di/dt = 100 A/ s
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
2 V
55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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相关代理商/技术参数 |
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|---|---|
| SI8401DB-T1-E1 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI8401DB-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI-8401L | 制造商:Sanken Electric Co Ltd 功能描述:Switching Mode Regulator 4-Pin 制造商:Sanken Electric Co Ltd 功能描述:IC REG BUCK 5V 0.5A EI-12.5 |
| Si8402AB-B-IS | 功能描述:隔离器接口集成电路 2.5 KV BIDIRECTIONAL I2C ISOLATOR 1.7MHz RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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