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| 型号： | SIB406EDK-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 20V SC-75-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 3.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 10V |
| 功率 - 最大： | 10W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SC-75-6L |
| 供应商设备封装： | PowerPAK? SC-75-6L 单 |
| 包装： | 标准包装 |
| 其它名称： | SIB406EDK-T1-GE3DKR |
New Product
SiB406EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.046 at V GS = 4.5 V
0.063 at V GS = 2.5 V
I D (A) a
6
6
Q g (Typ.)
3.5 nC
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
? New Thermally Enhanced PowerPAK ?
SC-75 Package
- Small Footprint Area
- Low On-Resistance
? Typical ESD Protection 560 V
APPLICATIONS
PowerPAK SC-75-6L-Sin g le
? Load Switch for Portable Applications
? High Frequency DC/DC Converter
D
1
D
2
D
3
Markin g Code
D
6
D
5
1.60 mm
4
S
S
G
1.60 mm
Part # code
ADX
XXX
Lot Tracea b ility
and Date code
G
S
Orderin g Information: SiB406EDK-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
± 12
6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
6 a
5.1 b, c
4.1 b, c
15
6 a
1.6 b, c
10
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
6.4
1.95 b, c
W
T A = 70 °C
1.25 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 5 s R thJA
Maximum Junction-to-Case (Drain) Steady State R thJC
51 64
10 12.5
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 100 °C/W.
Document Number: 69088
S-83095-Rev. A, 29-Dec-08
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIB408DK | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SiB408DK-T1-GE3 | 功能描述:MOSFET 30V 7.0A 13W 40mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIB410DK | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIB410DK-T1-GE3 | 功能描述:MOSFET 30V 9A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIB411DK-T1-E3 | 功能描述:MOSFET 20V 9.0A 13W 66mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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