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| 型号： | SIB433EDK-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V SC-75-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 58 毫欧 @ 3.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 8V |
| 功率 - 最大： | 13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SC-75-6L |
| 供应商设备封装： | PowerPAK? SC-75-6L 单 |
| 包装： | 标准包装 |
| 其它名称： | SIB433EDK-T1-GE3DKR |
SiB433EDK
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A)
Q g (Typ.)
? TrenchFET ? Power MOSFET
? New Thermally Enhanced PowerPAK ?
- 20
0.058 at V GS = - 4.5 V
0.077 at V GS = - 2.5 V
0.105 at V GS = - 1.8 V
- 9 a
- 9 a
-5
7.6 nC
SC-75 Package
- Small Footprint Area
- Low On-Resistance
? 100 % R g Tested
? Typical ESD Performance 2000 V
? Built in ESD Protection with Zener Diode
PowerPAK SC-75-6L-Sin g le
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
1
D
D
2
? Load Switch for Portable Devices
? Charger Switch for Portable
S
6
D
G
3
Devices
D
5
1.60 mm
4
S
S
1.60 mm
Markin g Code
BLX
G
R
Part # code
XXX
Orderin g Information:
SiB433EDK-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Lot Tracea b ility
and Date code
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
±8
- 9 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 9 a
- 5.3 b, c
- 4.3 b, c
- 20
- 9 a
- 2 b, c
13
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
8.4
2.4 b, c
W
T A = 70 °C
1.6 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ? 5s
Steady State
R thJA
R thJC
41
7.5
51
9.5
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 65652
S12-0979-Rev. B, 30-Apr-12
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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