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参数资料
| 型号： | SIC769ACD-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/19页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PFC STAGE PPAK MLP66-40 |
| 标准包装： | 1 |
| 系列： | DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 35A |
| 电源电压： | 3 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerWFQFN |
| 供应商设备封装： | PowerPAK? MLP66-40 |
| 包装： | 标准包装 |
| 其它名称： | SIC769ACD-T1-GE3DKR |
SiC769ACD
Vishay Siliconix
ORDERING INFORMATION
Part Number
SiC769ACD-T1-GE3
SiC769ADB
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Package
PowerPAK MLP66-40
Reference board
Parameter
Input Voltage
Switch Node Voltage (DC)
Drive Input Voltage
Control Input Voltage
Logic Pins
Boot Voltage DC (referenced to C GND )
Boot Voltage < 200 ns Transient (referenced to C GND )
Boot to Phase Voltage DC
Boot to Phase Voltage < 200 ns
Ambient Temperature Range
Maximum Junction Temperature
Storage Junction Temperature
Symbol
V IN
V SW
V DRV
V CIN
V PWM , V DSBL# ,
V THDN , V SMOD
V BS
V BS_PH
T A
T J
T STG
Min.
- 0.3
- 0.3
- 0.3
- 0.3
- 0.3
- 0.3
- 0.3
- 0.3
- 0.3
- 40
- 65
Max.
20
20
7.0
7.0
V CIN + 0.3
27
29
7
9
125
150
150
Unit
V
°C
Soldering Peak Temperature
260
Note:
a. T A = 25 °C and all voltages referenced to P GND = C GND unless otherwise noted.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Input Voltage
Control Input Voltage
Drive Input Voltage
Switch Node
Symbol
V IN
V CIN
V DRV
V SW_DC
Min.
3.0
4.5
4.5
Typ.
12
12
Max.
16
5.5
5.5
16
Unit
V
Note:
a. Recommended operating conditions are specified over the entire temperature range, and all voltages referenced to P GND = C GND unless
otherwise noted.
THERMAL RESISTANCE RATINGS
Parameter
Maximum Power Dissipation at T PCB = 25 °C
Maximum Power Dissipation at T PCB = 100 °C
Thermal Resistance from Junction to Top
Thermal Resistance from Junction to PCB
Symbol
P D_25C
P D_100C
R th_J_TOP
R th_J_PCB
Typ.
Max.
25
10
15
5
Unit
W
°C/W
www.vishay.com
2
Document Number: 65708
S10-0113-Rev. B, 18-Jan-10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIC769ADB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
| SIC769CD-T1-E3 | 功能描述:功率驱动器IC 35A 3.0-16.0V Built-In PWM Cont RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SIC769DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
| SIC778A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Performance DrMOS a?? Integrated Power Stage |
| SIC778ACD-T1-GE3 | 功能描述:功率驱动器IC DrMOS 40A 3-20Vin Thermal monitor flag RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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