参数资料
| 型号： | SIC769CD-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/18页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PFC STAGE PPAK MLP66-40 |
| 标准包装： | 3,000 |
| 系列： | DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 35A |
| 电源电压： | 3 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? MLP66-40 |
| 供应商设备封装： | PowerPAK? MLP66-40 |
| 包装： | 带卷 (TR) |
| 其它名称： | SIC769CD-T1-E3-ND SIC769CD-T1-E3TR |
SiC769
Vishay Siliconix
Integrated DrMOS Power Stage
DESCRIPTION
The SiC769CD is an integrated solution that contains PWM
optimized n-channel MOSFETs (high side and low side) and
a full featured MOSFET driver IC. The device complies with
the Intel DrMOS standard for desktop and server V core power
stages. The SiC769CD delivers up to 35 A continuous output
current and operates from an input voltage range of 3 V to
16 V. The integrated MOSFETs are optimized for output
voltages in the ranges of 0.8 V to 2 V with a nominal input
voltage of 12 V. The device can also deliver very high power
at 5 V output for ASIC applications.
The SiC769CD incorporates an advanced MOSFET gate
driver IC. This IC accepts a single PWM input from the V R
controller and converts it into the high side and low side
MOSFET gate drive signals. The driver IC is designed to
implement the skip mode (SMOD) function for light load
efficiency improvement. Adaptive dead time control also
works to improve efficiency at all load points. The SiC769CD
has a thermal warning (THDN) that alerts the system of
excessive junction temperature. The driver IC includes an
enable pin, UVLO and shoot through protection.
The SiC769CD is optimized for high frequency buck
applications. Operating frequencies in excess of 1 MHz can
easily be achieved.
The SiC769CD is packaged in Vishay Siliconix high
performance PowerPAK MLP6 x 6 package. Compact
co-packaging of components helps to reduce stray
inductance, and hence increases efficiency.
? FEATURES
? Integrated Gen III MOSFETs and DrMOS
compliant gate driver IC
? Enables V core switching at 1 MHz
? Easily achieve > 90 % efficiency in multi-phase,
low output voltage solutions
? Low ringing on the VSWH pin reduces EMI
? Pin compatible with DrMOS 6 x 6 version 3.0
? Tri-state PWM input function prevents negative output
voltage swing
? 5 V logic levels on PWM
? MOSFET threshold voltage optimized for 5 V driver bias
supply
? Automatic skip mode operation (SMOD) for light load
efficiency
? Under-voltage lockout
? Built-in bootstrap schottky diode
? Adaptive deadtime and shoot through protection
? Thermal shutdown warning flag
? Low profile, thermally enhanced PowerPAK ? MLP 6 x 6
40 pin package
? Halogen-free according to IEC 61249-2-21 definition
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? CPU and GPU core voltage regulation
? Server, computer, workstation, game console, graphics
boards, PC
SiC769CD APPLICATION DIAGRAMM
5 V
V CI N
V I N
SMOD
BOOT
Document Number: 64981
S11-0975-Rev. F, 16-May-11
DSBL#
P W M
THD N
SiC769CD
Figure 1
V S W H
PHASE
V O
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIC769DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
| SIC778A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Performance DrMOS a?? Integrated Power Stage |
| SIC778ACD-T1-GE3 | 功能描述:功率驱动器IC DrMOS 40A 3-20Vin Thermal monitor flag RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SIC778CD-T1-GE3 | 功能描述:功率驱动器IC DrMOS Integrated Power Stage RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SIC779 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
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