参数资料
型号: SIC769CD-T1-E3
厂商: Vishay Siliconix
文件页数: 4/18页
文件大小: 0K
描述: IC CTLR PFC STAGE PPAK MLP66-40
标准包装: 3,000
系列: DrMOS
类型: 高端/低端驱动器
输入类型: PWM
输出数: 1
电流 - 输出 / 通道: 35A
电源电压: 3 V ~ 16 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: PowerPAK? MLP66-40
供应商设备封装: PowerPAK? MLP66-40
包装: 带卷 (TR)
其它名称: SIC769CD-T1-E3-ND
SIC769CD-T1-E3TR
SiC769
Vishay Siliconix
MOSFET SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Symbol
V VCIN = V DSBL# = 5 V,
V VIN = 12 V, T A = 25 °C
Min.
Typ. a
Max.
Unit
V DS
V GS = 0, I DS = 250 μA
20
V
High Side
Low Side
R DS(on)_H
V DS
R DS(on)_L
V GH = 5 V, resistance measured
at package pins
V GS = 0, I DS = 250 μA
V GL = 5 V, resistance measured
at package pins
20
6
1.7
m ?
V
m ?
Note:
a. Typical MOSFET Parameters are provided as a design guide.
TIMING SPECIFICATIONS
Test Conditions Unless Specified
V VDRV = V VCIN = V DSBL# = 5 V,
Parameter
Turn Off Propagation Delay
High Side a
Symbol
t d_on_HS
V VIN = 12 V, T A = 25 °C
25 % of PWM to 90 % of GH
Min.
10
Typ.
20
Max.
30
Unit
Rise Time High Side
Fall Time High Side
t r_HS
t f_HS
10 % to 90 % of GH
90 % to 10 % of GH
8
8
Turn Off Propagation Delay
Low Side a
t d_off_LS
75 % of PWM to 90 % of GL
10
20
30
ns
Rise Time Low Side
Fall Time Low Side
Dead Time Rising
Dead Time Falling
t r_LS
t f_LS
t dead_on
t dead_off
10 % to 90 % of GL
90 % to 10 % of GL
10 % of GL to 10 % of GH
10 % of GH to 10 % of GL
8
8
15
15
Note:
a. Min. and Max. are not 100 % production tested.
www.vishay.com
4
Document Number: 64981
S11-0975-Rev. F, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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