- 您现在的位置：买卖IC网 > PDF目录1877 > SIC769ACD-T1-GE3 (Vishay Siliconix)IC CTLR PFC STAGE PPAK MLP66-40 PDF资料下载
参数资料
| 型号： | SIC769ACD-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/19页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PFC STAGE PPAK MLP66-40 |
| 标准包装： | 1 |
| 系列： | DrMOS |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 35A |
| 电源电压： | 3 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-PowerWFQFN |
| 供应商设备封装： | PowerPAK? MLP66-40 |
| 包装： | 标准包装 |
| 其它名称： | SIC769ACD-T1-GE3DKR |
SiC769ACD
Vishay Siliconix
ELECTRICAL SPECIFICATIONS
Test Conditions Unless Specified
V DSBL# = V SMOD = 5 V,
Parameter
Symbol
V IN = 12 V, V VDRV = V VCIN = 5 V,
T A = 25 °C
Min.
Typ. a
Max.
Unit
Power Supplies
V DSBL# = 0 V, no switching
20
V CIN Control Input Current
I VCIN
V DSBL# = 5 V, no switching
400
μA
V DSBL# = 5 V, f s = 300 kHz, D = 0.1
600
Drive Input Current (Dynamic)
I VDRV
f s = 300 kHz, D = 0.1
f s = 1000 kHz, D = 0.1
14
40
18
54
mA
Bootstrap Supply
Bootstrap Switch Forward Voltage
V BS Diode
V VCIN = 5 V, forward bias current 2 mA
0.60
0.75
V
Control Inputs (PWM, DSBL#, SMOD)
PWM Rising Threshold
V th_pwm_r
1.8
2
2.3
PWM Falling Threshold
PWM Tristate Rising Threshold
PWM Tristate Falling Threshold
PWM Tristate Rising Threshold Hysteresis
PWM Tristate Falling Threshold Hysteresis
Tristate Hold-Off Time b
PWM Input Current
V th_pwm_f
V th_tri_r
V th_tri_f
V hys_tri_r
V hys_tri_f
t TSHO
I PWM
V PWM = 3.3 V
V PWM = 0 V
0.8
0.9
1.6
1.0
1.3
1.8
220
240
150
22
- 17
1.2
1.8
2
V
mV
ns
μA
SMOD, DSBL# Logic Input Voltage
Pull Down Impedance
THDN Output Low
V LOGIC_LH
V LOGIC_LH
R THDN
V THDNL
Rising (low to high)
Falling (high to low)
5 k Ω resistor pull-up to V CIN
2.0
40
0.04
0.8
V
Ω
V
Protection
Thermal Warning Flag Set
150
Thermal Warning Flag Clear
Thermal Warning Flag Hysteresis
135
15
°C
Under Voltage Lockout (V CIN )
Under Voltage Lockout (V CIN )
V UVLO
Rising, on threshold
Falling, off threshold
2.5
3.3
2.9
3.9
V
Under Voltage Lockout Hysteresis (V CIN )
V UVLO_HYST
400
mV
High Side Gate Discharge Resistor b
R HS_DSCRG
V VDRV = V VCIN = 0 V; V IN = 12 V
20.2
k Ω
Notes:
a. Typical limits are established by characterization and are not production tested.
b. Guaranteed by design.
MOSFET SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Symbol
V VCIN = V DSBL# = 5 V,
V VIN = 12 V, T A = 25 °C
Min.
Typ. a
Max.
Unit
V DS
V GS = 0 V, I DS = 250 μA
20
V
High Side
Low Side
R DS(on)_H
V DS
R DS(on)_L
V GH = 5 V, resistance measured
at package pins
V GS = 0 V, I DS = 250 μA
V GL = 5 V, resistance measured
at package pins
20
6.0
1.7
m Ω
V
m Ω
Note:
a. Typical MOSFET parameters are provided as a design guide.
Document Number: 65708
S10-0113-Rev. B, 18-Jan-10
www.vishay.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| SIC769CD-T1-E3 | IC CTLR PFC STAGE PPAK MLP66-40 |
| SIC778ACD-T1-GE3 | IC BUCK ADJ 40A 40MLP |
| SIP11204DLP-T1-E3 | IC REG CTRLR ISO PWM MLP44-16 |
| SIP11205DLP-T1-E3 | IC REG CTRLR ISO PWM MLP44-16 |
| SIP11206DLP-T1-E3 | IC REG CTRLR ISO PWM MLP44-16 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIC769ADB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
| SIC769CD-T1-E3 | 功能描述:功率驱动器IC 35A 3.0-16.0V Built-In PWM Cont RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| SIC769DB | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Integrated DrMOS Power Stage |
| SIC778A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Performance DrMOS a?? Integrated Power Stage |
| SIC778ACD-T1-GE3 | 功能描述:功率驱动器IC DrMOS 40A 3-20Vin Thermal monitor flag RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。