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参数资料
| 型号： | SIJ400DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 9/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V PPAK SO-8L |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7765pF @ 15V |
| 功率 - 最大： | 69.4W |
| 安装类型： | * |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
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Revision: 02-Oct-12
1
Document Number: 91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIJ420DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
| SIJ420DP-T1-GE3 | 功能描述:MOSFET N-CH 20V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SIJ458DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIJ458DP-T1-GE3 | 功能描述:MOSFET N-CH 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SIJ478DP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CHAN 80V SO-8L 制造商:Vishay Intertechnologies 功能描述:N-CHANNEL 80-V (D-S) MOSFET |
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