- 您现在的位置：买卖IC网 > Datasheet目录515 > SIJ482DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH 80V 60A SO-8 Datasheet资料下载
参数资料
| 型号： | SIJ482DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 60A SO-8 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 71nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2425pF @ 40V |
| 功率 - 最大： | 69.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 剪切带 (CT) |
| 其它名称： | SIJ482DP-T1-GE3CT |
New Product
SiJ482DP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
?
TrenchFET ? Power MOSFET
V DS (V)
80
R DS(on) ( ? ) (Max.)
0.0062 at V GS = 10 V
0.0065 at V GS = 7.5 V
0.0095 at V GS = 4.5 V
I D (A)
60
a, g
Q g (Typ.)
24 nC
?
?
?
100 % R g and UIS Tested
Capable of Operating with 5 V Gate Drive
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK ? SO-8L Single
APPLICATIONS
? DC/DC Primary Side Switch
D
5m
3m
6.1
m
D
5.1
m
? Synchronous Rectification
? High Current Switching
G
4
G
S
3
S
2
S
1
S
N-Channel MOSFET
Ordering Information:
SiJ482DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
80
± 20
60 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
60 g
21.1 b, c
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = ? 0.1 mH
I DM
I S
I AS
E AS
16.9 b, c
100
60 g
4.5 b, c
30
45
A
mJ
T C = 25 °C
69.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
44.4
5 b, c
W
T A = 70 °C
3.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
20
1.3
25
1.8
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
Document Number: 63728
S12-0544-Rev. A, 12-Mar-12
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| SIJ800DP-T1-GE3 | MOSFET N-CH 40V PPAK SO-8L |
| SIM-012SBT87 | EMITTER IR SIDE VIEW SMD T/R |
| SIM-030ST | LED IR 870NM 30MW SR SMD |
| SIM-20ST | EMITTER IR 950NM SIDE VIEW TH |
| SIM-22STF | EMITTER IR 950NM SIDE VIEW TH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIJ484DP-T1-GE3 | 功能描述:MOSFET N-CH 30V PPAK SO-8L RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SIJ591CIN WAF | 制造商:Texas Instruments 功能描述: |
| SIJ800DP-T1-GE3 | 功能描述:MOSFET 40V 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIJ-DH-25 | 制造商:Russell 功能描述: |
| SIKR. LYSD. TOUCH/DREJE 2 | 制造商:JO-EL Electric 功能描述: |
发布紧急采购，3分钟左右您将得到回复。