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参数资料
| 型号： | SIR418DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 40V PPAK 8SOIC |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2410pF @ 20V |
| 功率 - 最大： | 39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 带卷 (TR) |
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All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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PDF描述 |
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| SIR440DP-T1-GE3 | MOSFET N-CH 20V 60A PPAK 8SOIC |
| SIR462DP-T1-GE3 | MOSFET N-CH 30V 30A PPAK 8SOIC |
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| SIR468DP-T1-GE3 | MOSFET N-CH 30V 40A PPAK 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR418DP-T1-GE3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 40V 40A |
| SIR422 | 制造商:American Electronic Components Inc 功能描述:ELESTA RELAY 24 VDC, 10 AMP. 250 VAC |
| SIR422-18VDC | 制造商:American Electronic Components Inc 功能描述:SIR422-18VDC |
| SIR422DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SIR422DP-T1-GE3 | 功能描述:MOSFET 40V 40A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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