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参数资料
| 型号： | SIR95-21C/TR10 |
| 厂商： | EVERLIGHT ELECTRONICS CO LTD |
| 元件分类： | 红外LED |
| 英文描述： | 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMD, 2 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 166K |
| 代理商： | SIR95-21C/TR10 |
Everlight Electronics Co., Ltd.
http://www.everlight.com
Rev 3
Page: 1 of 10
Device No：DIR-0000095
Prepared date：02-18-2009
Prepared by：Jaine Tsai
Technical Data Sheet
1.9mm Round Subminiature “Yoke” Lead Infrared LED
SIR95-21C/TR10
Features
Good spectral matching
to Si photodetector
Low forward voltage
Peak wavelength λp=875nm
Package in 12mm tape on 7” diameter reel
Pb free
The product itself will remain within RoHS compliant version.
Descriptions
SIR95-21C/TR10 is an infrared emitting diode in miniature
SMD package which is molded in a water clear plastic with
spherical top view lens. The device is spectrally matched
with silicon photodiode and phototransistor.
Applications
PCB mounted infrared sensor
Infrared remote control units with high power requirement
Scanner
Infrared applied system
Device Selection Guide
Chip
LED Part No.
Material
Lens Color
SIR95-21C/TR10
GaAlAs
Water clear
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIRA00DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA00DP-T1-GE3 | 功能描述:MOSFET 30V 1mOhm@10V 60A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA02DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA02DP-T1-GE3 | 功能描述:MOSFET 30V 2mOhm@10V 50A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA04DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
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