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参数资料
| 型号： | SIR95-21C/TR10 |
| 厂商： | EVERLIGHT ELECTRONICS CO LTD |
| 元件分类： | 红外LED |
| 英文描述： | 1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SMD, 2 PIN |
| 文件页数： | 2/10页 |
| 文件大小： | 166K |
| 代理商： | SIR95-21C/TR10 |
Everlight Electronics Co., Ltd.
http://www.everlight.com
Rev 3
Page: 10 of 10
Device No：DIR-0000095
Prepared date：02-18-2009
Prepared by：Jaine Tsai
RoHS
Pb
CPN :
PN
SIR95-21C/TR10
QTY :
1000
LOT NO :
Reference :
CAT :
HUE :
REF :
EVERLIGHT
MADE IN TAIWAN
SIR95-21C/TR10
Packing Procedure
Aluminum moistue-proof bag
Label
Desiccant
Label
Label Form Specification
CPN: Customer’s Production Number
P/N : Production Number
QTY: Packing Quantity
CAT: Ranks
HUE: Peak Wavelength
REF: Reference
LOT No: Lot Number
MADE IN TAIWAN: Production Place
Notes
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on
material change for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions
for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for
any damage resulting from use of the product which does not comply with the absolute
maximum ratings and the instructions included in these specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT
corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s
consent.
EVERLIGHT ELECTRONICS CO., LTD.
Tel: 886-2-2267-2000, 2267-9936
Office: No 25, Lane 76, Sec 3, Chung Yang Rd,
Fax: 886-2267-6244, 2267-6189, 2267-6306
Tucheng, Taipei 236, Taiwan, R.O.C
http://www.everlight.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIRA00DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA00DP-T1-GE3 | 功能描述:MOSFET 30V 1mOhm@10V 60A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA02DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SIRA02DP-T1-GE3 | 功能描述:MOSFET 30V 2mOhm@10V 50A N-Ch G-IV RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SIRA04DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
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