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参数资料
| 型号： | SPB11N60S5 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 2/14页 |
| 文件大小： | 193K |
| 代理商： | SPB11N60S5 |
2001-07-05
Page 2
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJC
R
thJA
R
thJA
-
-
-
-
1
K/W
62
-
-
-
35
62
-
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
-
-
-
-
1
W/K
°C
T
sold
260
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=0.25mA
Drain-source avalanche breakdown voltage
V
(BR)DSS
600
-
-
V
V
GS
=0V,
I
D
=11A
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 0.5 mA
Zero gate voltage drain current
V
(BR)DS
-
700
-
V
GS(th)
2.1
3
3.9
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
DSS
-
-
-
-
25
250
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
-
100
nA
V
GS
=10V,
I
D
=7A,
T
j
=25°C
V
GS
=10V,
I
D
=7A,
T
j
=150°C
R
DS(on)
-
-
0.34
1.1
0.38
1.22
Gate input resistance
f
= 1 MHz, open drain
R
G
-
0.86
-
1Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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