参数资料
型号: SPB11N60S5
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 7/14页
文件大小: 193K
代理商: SPB11N60S5
2001-07-05
Page 7
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
9 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 10 μs
0
2
4
6
8
10
12
V
15
V
GS
0
4
8
12
16
20
24
28
32
A
40
I
D
25°C
150°C
10 Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 0.5 mA
-60
-20
20
60
100
°C
160
T
j
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
G
max.
typ.
min.
11 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 11 A pulsed
0
10
20
30
40
50
nC
70
Q
Gate
0
2
4
6
8
10
12
V
16
SPP11N60C3
V
G
0,8
V
DS max
DS max
V
0,2
12 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPP11N60C3
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
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