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参数资料
| 型号： | SPBI11N60C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS Power Transistor |
| 中文描述： | 酷MOS功率晶体管 |
| 文件页数： | 3/14页 |
| 文件大小： | 193K |
| 代理商： | SPBI11N60C3 |
2001-07-05
Page 3
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=7A
-
8.3
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
1460
610
21
-
-
-
pF
V
GS
=0V,
V
DS
=0V to 480V
-
45
-
pF
C
o(tr)
-
85
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/10V,
I
D
=11A,
R
G
=6.8
-
-
-
-
10
5
44
5
-
-
ns
70
9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
=480V,
I
D
=11A
-
-
-
5.5
22
45
-
-
nC
V
DD
=480V,
I
D
=11A,
V
GS
=0 to 10V
60
Gate plateau voltage
V
(plateau)
V
DD
=480V,
I
D
=11A
-
5.5
-
V
1
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
2
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
相关PDF资料 |
PDF描述 |
|---|---|
| SPI11N60C3 | Cool MOS Power Transistor |
| SPP11N60C3 | Cool MOS Power Transistor |
| SPP11N60C2 | Cool MOS⑩ Power Transistor |
| SPI11N60S5 | Cool MOS⑩ Power Transistor |
| SPB11N60C2 | Cool MOS⑩ Power Transistor |
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| SPBS9048 | 制造商:Panasonic Industrial Company 功能描述:HINGE |
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