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参数资料
| 型号： | SPBI11N60C3 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS Power Transistor |
| 中文描述： | 酷MOS功率晶体管 |
| 文件页数： | 4/14页 |
| 文件大小： | 193K |
| 代理商： | SPBI11N60C3 |
2001-07-05
Page 4
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
11
A
Inverse diode direct current,
pulsed
I
SM
-
-
33
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
V
SD
t
rr
Q
rr
I
rrm
di
rr
/
dt
V
GS
=0V,
I
F
=
I
S
-
-
-
-
-
1
1.2
600
-
-
-
V
ns
μC
A
A/μs
V
R
=480V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/μs
400
6
41
1200
Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.015
0.034
0.056
0.124
0.143
0.057
K/W
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.0002121
0.0007091
0.001184
0.00254
0.011
Ws/K
0.092
External Heatsink
T
j
T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
相关PDF资料 |
PDF描述 |
|---|---|
| SPI11N60C3 | Cool MOS Power Transistor |
| SPP11N60C3 | Cool MOS Power Transistor |
| SPP11N60C2 | Cool MOS⑩ Power Transistor |
| SPI11N60S5 | Cool MOS⑩ Power Transistor |
| SPB11N60C2 | Cool MOS⑩ Power Transistor |
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| SPBS9048 | 制造商:Panasonic Industrial Company 功能描述:HINGE |
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