- 您现在的位置：买卖IC网 > PDF目录374892 > SPP80N06S2L-06 (INFINEON TECHNOLOGIES AG) OptiMOS Power-Transistor PDF资料下载
参数资料
| 型号： | SPP80N06S2L-06 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶体管 |
| 文件页数： | 2/8页 |
| 文件大小： | 415K |
| 代理商： | SPP80N06S2L-06 |
2003-05-09
Page 2
SPI80N06S2L-05
SPP80N06S2L-05,SPB80N06S2L-05
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
0.3
0.5
K/W
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
-
-
62
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
Zero gate voltage drain current
V
(BR)DSS
55
-
-
V
V
GS(th)
1.2
1.6
2
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V, T
j
=125°C
2)
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=4.5V,
I
D
=80A
V
GS
=4.5V,
I
D
=80A,
SMD version
Drain-source on-state resistance
4)
R
DS(on)
-
-
4.4
4.1
6
5.7
m
V
GS
=10V,
I
D
=80A
V
GS
=10V,
I
D
=80A,
SMD version
R
DS(on)
-
-
3.6
3.3
4.8
4.5
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 173A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
相关PDF资料 |
PDF描述 |
|---|---|
| SPP80N06S2L-07 | OptiMOS Power-Transistor |
| SPP80N06S2L-09 | OptiMOS Power-Transistor |
| SPP80N06S2L-11 | OptiMOS Power-Transistor |
| SPP80N06S2L-H5 | OptiMOS Power-Transistor |
| SPL081A | Low Voltage 7KB LCD Controller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP80N06S2L-07 | 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPP80N06S2L-07 | 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC TO-220 |
| SPP80N06S2L07NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB |
| SPP80N06S2L-09 | 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPP80N06S2L09NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB |
发布紧急采购，3分钟左右您将得到回复。